Jean-Claude Royer (firstname.lastname@example.org)
Leti, INAC (Institute for Nanoscience and Cryogenics) and Liten (Laboratory for Innovation in New Energy Technologies and Nanomaterials) joined forces five years ago on the MINATEC campus to create a platform devoted to nanoscale characterization.
The Nano-Characterization Platform, now known as PFNC, covers a large domain of competencies, including electron microscopy, X-ray diffraction, surface analysis and sample preparation. The PFNC comprises more than 40 state-of-the-art characterization tools located in a dedicated laboratory of more 2,500m2, staffed by approximately 80 researchers and students.
This platform, unique in Europe, enables the development of novel techniques and competencies in order to address new challenges in characterization for micro- and nanoelectronics and materials for energy and nanosciences.
The platform provides support in characterization for internal CEA-Leti programs and also offers academic and industrial partners access to Leti’s characterization tool set and expertise to address some of their technological challenges.
Within the framework of the Europe’s Basic Technological Research network (RTB), the Nano-Characterization Platform has continued to acquire and develop characterization techniques and tools, including:
In 2010, we launched a common lab with FEI to combine the expertise of CEA-Leti and FEI in transmission-electron-microscopy applications with the capabilities of FEI’s new Titan Pico transmission electron microscope.
Off-axis electron holography has now been improved in order to give 1nm spatial resolution in the active dopant maps. Figure 1(a) shows a TEM image of a 28nm gate nMOS device. Figure 1(b) shows a dopant map of the nMOS device with a spatial resolution of around 5nm, which was previously unavailable. Now by improving specimen preparation and the experimental protocol, active dopant maps can be acquired with 1nm spatial resolution as shown in Figure 1(c).
AFM under UHV: characterization of the dewetting mechanism in a thin silicon film. The figure shows typical topography image highlighting the silicon dots obtained after annealing at 800°C